Product Summary

The BCP51-10 E6327 is a PNP Silicon AF Transistor.

Parametrics

BCP51-10 E6327 absolute maximum ratings: (1)Collector-emitter voltage VCEO: 45 to 80 V; (2)Collector-emitter voltage RBE VCER: 45 to 100V; (3)Collector-base voltage VCBO: 45 to 100V; (4)Emitter-base voltage VEBO: 5V; (5)DC collector current IC: 1 A; (6)Peak collector current ICM: 1.5A; (7)Base current IB: 100 mA; (8)Peak base current IBM: 200mA; (9)Total power dissipation, TS = 124 ℃ Ptot: 1.5 W; (10)Junction temperature Tj: 150 ℃; (11)Storage temperature Tstg: -65 to 150℃.

Features

BCP51-10 E6327 features: (1)For AF driver and output stages; (2)High collector current; (3)Low collector-emitter saturation voltage; (4)Complementary types: BCP54...BCP56 (NPN).

BCP51
BCP51

Fairchild Semiconductor

Transistors Bipolar (BJT) SOT-223 PNP GP AMP

Data Sheet

0-1: $0.17
1-25: $0.15
25-100: $0.14
100-250: $0.09
BCP51 T/R
BCP51 T/R

NXP Semiconductors

Transistors Bipolar (BJT) TRANS MED PWR TAPE-7

Data Sheet

Negotiable 
BCP51,115
BCP51,115

NXP Semiconductors

Transistors Bipolar (BJT) TRANS MED PWR TAPE-7

Data Sheet

0-1: $0.06
1-25: $0.05
25-100: $0.05
100-250: $0.05
BCP51_Q
BCP51_Q

Fairchild Semiconductor

Transistors Bipolar (BJT) SOT-223 PNP GP AMP

Data Sheet

Negotiable 
BCP51-10
BCP51-10

Other


Data Sheet

Negotiable 
BCP51-10 /T3
BCP51-10 /T3

NXP Semiconductors

Transistors Bipolar (BJT) TRANS MED PWR TAPE13

Data Sheet

Negotiable