Product Summary
The BCP51-10 E6327 is a PNP Silicon AF Transistor.
Parametrics
BCP51-10 E6327 absolute maximum ratings: (1)Collector-emitter voltage VCEO: 45 to 80 V; (2)Collector-emitter voltage RBE VCER: 45 to 100V; (3)Collector-base voltage VCBO: 45 to 100V; (4)Emitter-base voltage VEBO: 5V; (5)DC collector current IC: 1 A; (6)Peak collector current ICM: 1.5A; (7)Base current IB: 100 mA; (8)Peak base current IBM: 200mA; (9)Total power dissipation, TS = 124 ℃ Ptot: 1.5 W; (10)Junction temperature Tj: 150 ℃; (11)Storage temperature Tstg: -65 to 150℃.
Features
BCP51-10 E6327 features: (1)For AF driver and output stages; (2)High collector current; (3)Low collector-emitter saturation voltage; (4)Complementary types: BCP54...BCP56 (NPN).
BCP51 |
Fairchild Semiconductor |
Transistors Bipolar (BJT) SOT-223 PNP GP AMP |
Data Sheet |
|
|
|||||||||||||
BCP51 T/R |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS MED PWR TAPE-7 |
Data Sheet |
Negotiable |
|
|||||||||||||
BCP51,115 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS MED PWR TAPE-7 |
Data Sheet |
|
|
|||||||||||||
BCP51_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) SOT-223 PNP GP AMP |
Data Sheet |
Negotiable |
|
|||||||||||||
BCP51-10 |
Other |
Data Sheet |
Negotiable |
|
||||||||||||||
BCP51-10 /T3 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS MED PWR TAPE13 |
Data Sheet |
Negotiable |
|