Product Summary

The BSM75GD120DN2 is an IGBT Power Module .

Parametrics

BSM75GD120DN2 maximum ratings: (1)Collector-emitter voltage VCE 1200 V; (2)Collector-gate voltage RGE = 20 kW VCGR: 1200 V; (3)Gate-emitter voltage VGE: ± 20V; (4)DC collector current TC = 25 ℃: 75A; (5)TC = 80 ℃: 103A; (6)Pulsed collector current, tp = 1 ms TC = 25 ℃: 206A; (7)TC = 80 ℃: 150A; (8)Power dissipation per IGBT TC = 25 ℃ Ptot: 520W; (9)Thermal resistance, chip case RthJC ≤ 0.235 K/W; (10)Diode thermal resistance, chip case RthJCD ≤ 0.55; (11)Insulation test voltage, t = 1min. Vis: 2500 Vac; (12)Creepage distance: 16 mm; (13)Clearance: 11; (14)DIN humidity category, DIN 40 040: F; (15)IEC climatic category, DIN IEC 68-1: 55 / 150 / 56.

Features

BSM75GD120DN2 features: (1)Solderable Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.

Diagrams

BSM75GD120DN2 pin connection

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