IRF630NPBF

Power MOSFET, 9.3A, 82 W, 20 V, TO-220

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.25~1.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $0.25~1.00

PartNumber:: IRF630NPBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 12+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Ms. Melody's store

(China (Mainland))

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2012-11-23

From Other Seller

Part Number:IRF630NPBF
US $0.25 - 1.00
ad7716ap

US $1.13 - 1.13 / Piece
(0) Remove
74AHC2G08VS SOP-8

US $2.00 - 2.00 / Piece
(0) Remove
Quantity:

piece

Product Summary

The IRF630NPBF is a Power MOSFET from International Rectifier. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF630NPBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The IRF630NPBF provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.

Parametrics

IRF630NPBF absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V: 9.3A; (2)Continuous Drain Current, VGS @ 10V: 6.5A; (3)Pulsed Drain Current: 37A; (4)Power Dissipation: 82 W; (5)Linear Derating Factor:0.5 W/℃; (6)Gate-to-Source Voltage:±20 V; (7)Single Pulse Avalanche Energy:94 mJ; (8)Avalanche Current:9.3 A; (9)Repetitive Avalanche Energy:8.2 mJ; (10)Peak Diode Recovery dv/dt:8.1 V/ns; (11)Operating Junction and Storage Temperature Range:-55℃ to +175℃; (12)Soldering Temperature, for 10 seconds:300℃ (1.6mm from case ).

Features

IRF630NPBF features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated; (6)Ease of Paralleling; (7)Simple Drive Requirements; (8)Lead-free.