Product Summary
The 2SC5198 is a Silicon NPN triple diffused type TOSHIBA transistor.
Parametrics
2SC5198 absolute maximum ratings: (1)Collector-base voltage, VCBO: 140V; (2)Collector-emitter voltage, VCEO: 140V; (3)Emitter-base voltage, VEBO: 5V; (4)Collector current, IC: 10A; (5)Base current, IB: 1A; (6)Collector power dissipation, PC: 100W; (7)Junction temperature, Tj: 150℃; (8)Storage temperature range, Tstg: -55 to 150℃.
Features
2SC5198 features: (1)High breakdown voltage: VCEO=140V; (2)Complementary to 2SA1941; (3)Suitable for use in 70-W high fidelity audio amplifiers output stage.
Diagrams
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![]() 2SC5198 |
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![]() 2SC5198-O(Q) |
![]() Toshiba |
![]() Transistors Bipolar (BJT) NPN VCEO 140V Ic 10A PC 100W |
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![]() 2SC5198-O(Q,T) |
![]() Toshiba |
![]() Transistors Bipolar (BJT) NPN VCEO 140V Ic 10A PC 100W |
![]() Data Sheet |
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