Product Summary
The FDS5680 is an N-Channel MOSFET. The FDS5680 is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Parametrics
FDS5680 absolute maximum ratings: (1)VDSS Drain-Source Voltage: 60 V; (2)VGSS Gate-Source Voltage: ±20 V; (3)ID Drain Current - Continuous: 8 A; (4)PD Power Dissipation for Single Operation: 2.5 W; (5)TJ Tstg Operating and Storage Junction Temperature Range: -55 to +150 ℃.
Features
FDS5680 features: (1)Low gate charge (30nC typical); (2)Fast switching speed; (3)High performance trench technology for extremely low RDS(0N); (4)High power and current handling capability.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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FDS5680 |
Fairchild Semiconductor |
MOSFET SO-8 N-CH 60V |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
FDS5170N7 |
Fairchild Semiconductor |
MOSFET 60V N-Ch PowerTrench |
Data Sheet |
Negotiable |
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FDS5351 |
Fairchild Semiconductor |
MOSFET 60V N-Channel PowerTrench |
Data Sheet |
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FDS5670 |
Fairchild Semiconductor |
MOSFET SO-8 N-CH 60V |
Data Sheet |
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FDS5672 |
Fairchild Semiconductor |
MOSFET 60V 12A 10 OHM NCH POWER TRENCH MOSFET |
Data Sheet |
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FDS5680 |
Fairchild Semiconductor |
MOSFET SO-8 N-CH 60V |
Data Sheet |
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FDS5682 |
Fairchild Semiconductor |
MOSFET 60V N-CH. FET 20 MO SO8 TR |
Data Sheet |
Negotiable |
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