Product Summary
The IRF8707PBF is a HEXFET Power MOSFET. The IRF8707PBF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications.
Parametrics
IRF8707PBF absolute maximum ratings: (1)VDS Drain-to-Source Voltage: 30V; (2)VGS Gate-to-Source Voltage: 20V; (3)ID @ TA = 25°C Continuous Drain Current, VGS @ 10V: 11A; (4)ID @ TA = 70°C Continuous Drain Current, VGS @ 10V: 9.1A; (5)IDM Pulsed Drain Current: 88A; (6)PD @TA = 25°C Power Dissipation: 2.5W; (7)PD @TA = 70°C Power Dissipation: 1.8W; (8)TJ Operating Junction and TSTG Storage Temperature Range: -55 to 150°C.
Features
IRF8707PBF features: (1)Very Low Gate Charge; (2)Very Low RDS(on)at 4.5V VGS; (3)Ultra-Low Gate Impedance; (4)Fully Characterized Avalanche Voltage and Current; (5)20V VGS Max. Gate Rating; (6)100% tested for Rg; (7)Lead-Free.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRF8707PBF |
International Rectifier |
MOSFET |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
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IRF8010S |
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Data Sheet |
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Data Sheet |
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Data Sheet |
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